Invited Speakers
1.Interdisciplinary Physics and Related Areas of Science and Technology
Atsushi Kohno
(Fukuoka Univ.)
S1. Manpower Training for Science and Technology Educational Activities and Revitalization for the Kyushu Area
Fumihiko Nakamura
(Kurume Inst. of Tech.)
S1. Manpower Training for Science and Technology Educational Activities and Revitalization for the Kyushu Area
Kazuhiro Hara
(Kyushu Univ.)
S1. Manpower Training for Science and Technology Educational Activities and Revitalization for the Kyushu Area
Motoi Nakao
(Kyushu Inst. of Tech.)
S1. Manpower Training for Science and Technology Educational Activities and Revitalization for the Kyushu Area
Nao Terasaki
(AIST)
S1. Manpower Training for Science and Technology Educational Activities and Revitalization for the Kyushu Area
Naoko Iwata
(Toyota Motor Corp.)
1.5 Instrumentation, measurement and Metrology
Nobuyasu Hiramatsu
(Fukuoka Univ.)
S1. Manpower Training for Science and Technology Educational Activities and Revitalization for the Kyushu Area
Shin Horiuchi
(AIST)
1.5 Instrumentation, measurement and Metrology
2.Ionizing Radiation
Akimasa Ishikawa
(Tohoku Univ.)
S2. International Linear Collider and Its Technology
Akira Sugiyama
(Saga Univ.)
S2. International Linear Collider and Its Technology
Hitoshi Hayano
(KEK)
S2. International Linear Collider and Its Technology
Keisuke Maehata
(Kyushu Univ.)
2.2 Detection systems
Kiyotomo Kawagoe
(Kyushu Univ.)
S2. International Linear Collider and Its Technology
Sachio Komamiya
(The Univ. of Tokyo)
S2. International Linear Collider and Its Technology
Takayuki Saeki
(KEK)
S2. International Linear Collider and Its Technology
Tohru Takeshita
(Shinshu Univ.)
S2. International Linear Collider and Its Technology
3.Optics and Photonics
Akinobu Kanda
(Tsukuba Univ.)
S4. Electromagnetic controls in quantum hybrid systems
Hajime Nakanotani
(Kyushu Univ.)
3.2 Equipment optics and materials
Hiroshi Yoshikawa
(Saitama Univ.)
3.7 Laser processing
Junichi Fujikata
(PETRA)
3.15 Silicon photonics
Katsumi Midorikawa
(RIKEN)
S3. Novel optical metrologies based on advanced photonics
Kazuhiko Hirakawa
(The Univ. of Tokyo)
S4. Electromagnetic controls in quantum hybrid systems
Keiji Ono
(RIKEN)
S4. Electromagnetic controls in quantum hybrid systems
Keisuke Goda
(The Univ. of Tokyo)
S3. Novel optical metrologies based on advanced photonics
Kouta Kondou
(RIKEN)
S4. Electromagnetic controls in quantum hybrid systems
Minoru Kawamura
(RIKEN)
S4. Electromagnetic controls in quantum hybrid systems
Norihiko Nishizawa
(Nagoya Univ.)
S3. Novel optical metrologies based on advanced photonics
Norikatsu Mio
(Tokyo Univ.)
S3. Novel optical metrologies based on advanced photonics
Shun Takahashi
(Kyoto Inst. of Tech.)
S4. Electromagnetic controls in quantum hybrid systems
Tetsuya Ido
(NICT)
S3. Novel optical metrologies based on advanced photonics
4.JSAP-OSA Joint Symposia
Dangyuan Lei
(The Hong Kong Polytechnic Univ.)
4.1 Plasmonics
David S. Hall
(Amherst College)
4.9 Quantum Optics
Fabian Rotermund
(KAIST)
4.7 Terahertz Photonics
Hideo Mabuchi
(Stanford Univ.)
4.9 Quantum Optics
Hiroki Takesue
(NTT Basic Research Lab.)
4.9 Quantum Optics
Hiromi Okamoto
(Inst. for Molecular Sci.)
4.1 Plasmonics
James Chon
(Swinburne University of Technology)
Nano- and Micro-Photonics
Junichiro Kono
(Rice Univ.)
4.7 Terahertz Photonics
Kentaro Iwami
(Tokyo Univ. of Agri. and Tech.)
4.3 Nano-and Micro Photonics
Koji Hatanaka
(Academia Sinica)
4.8 Strong Light Excitation Phenomena Applied to Materials and Bio Engineering
Koji Sugioka
(RIKEN)
4.8 Strong Light Excitation Phenomena Applied to Materials and Bio Engineering
Kyoko Namura
(Kyoto Univ.)
4.8 Strong Light Excitation Phenomena Applied to Materials and Bio Engineering
Masataka Nakazawa
(Tohoku Univ.)
4.9 Quantum Optics
Nobuhiko Nishiyama
(Tokyo Inst. of Tech.)
4.4 Opto-electronics
Pakorn Kanchanawong
(National Univ. of Singapore)
4.5 Information Photonics
Robin C. B. Huang
(Nat. Tsing Hua Univ.)
4.3 Nano-and Micro Photonics
Shifeng Zhou
(South China Univ. of Tech.)
4.8 Strong Light Excitation Phenomena Applied to Materials and Bio Engineering
Shigeo Maruyama
(The Univ. of Tokyo)
4.6 Nanocarbon and 2D Materials
Shin Usuki
(Shizuoka Univ.)
4.5 Information Photonics
Siva Umapathy
(Indian Inst. of Sciences, Bangalore)
4.1 Plasmonics
Tadao Nagatsuma
(Osaka Univ.)
4.7 Terahertz Photonics
Tae-In Jeon
(Korea Maritime and Ocean Univ.)
4.7 Terahertz Photonics
Takashi Katagiri
(Tohoku Univ.)
4.2 Bio- and Medical Photonics
Takuo Tanaka
(RIKEN)
4.3 Nano-and Micro Photonics
Tao Chu
(Chinese Acad. of Sci.)
4.4 Opto-electronics
Tomohiro Kita
(Tohoku Univ.)
4.4 Opto-electronics
Toshiyuki Amano
(Wakayama Univ.)
4.5 Information Photonics
Tzu-Ming Liu
(University of Macau)
4.2 Bio- and Medical Photonics
Ursula Gibson
(Norwegian Univ. of Sci. and Tech.)
4.4 Opto-electronics
Wakana Kubo
(Tokyo Univ. of Agri. and Tech.)
4.1 Plasmonics
Wei-Feng Hsu
(National Taipei University of Technology)
4.5 Information Photonics
Yong-Hee Lee
(KAIST)
4.4 Opto-electronics
Yoshimasa Kawata
(Shizuoka Univ.)
4.1 Plasmonics
Yuichiro Kato
(RIKEN)
4.6 Nanocarbon and 2D Materials
6.Thin Films and Surfaces
Akihito Sawa
(AIST)
S6. Materials Nano-technology: Surfaces and Interfaces of Thin Films and Nano-composites
Akira Tsuchiyama
(Kyoto Univ.)
S7. Nanoscale 3D analyses for new device and materials development
Alejandro Roca
(Catalan Inst. of Nanoscience and Nanotechnology)
S6. Materials Nano-technology: Surfaces and Interfaces of Thin Films and Nano-composites
Atsushi Takahara
(Kyushu Univ.)
Code-sharing session of 6.5 Surface Physics, Vacuum & 7.6 Atomic/molecular beams and beam-related new technologies
Axel Hoffmann
(Argonne Nat. Lab.)
S6. Materials Nano-technology: Surfaces and Interfaces of Thin Films and Nano-composites
Azusa Hattori
(Osaka Univ.)
S5. Terahertz optical properties of oxides and the perspective for device applications
Catherine Dubourdieu
(Helmholtz Zentrum Berlin für Materialien und Energie)
S6. Materials Nano-technology: Surfaces and Interfaces of Thin Films and Nano-composites
Elvira Fantechi
(Univ. of Pisa, Italy)
S6. Materials Nano-technology: Surfaces and Interfaces of Thin Films and Nano-composites
Hiroki Tanaka
(Toshiba Corp.)
S7. Nanoscale 3D analyses for new device and materials development
Hiroshi Idzuchi
(Harvard Univ.)
S6. Materials Nano-technology: Surfaces and Interfaces of Thin Films and Nano-composites
Hiroyuki Nakamura
(Max-Planck-Institut)
S6. Materials Nano-technology: Surfaces and Interfaces of Thin Films and Nano-composites
Ikufumi Katayama
(Yokohama Nat. Univ.)
S5. Terahertz optical properties of oxides and the perspective for device applications
Jun Kato
(Toray Research Center)
S7. Nanoscale 3D analyses for new device and materials development
Kai Liu
(Univ. of California, Davis)
S6. Materials Nano-technology: Surfaces and Interfaces of Thin Films and Nano-composites
Kazuo Kadowaki
(Tsukuba Univ.)
S5. Terahertz optical properties of oxides and the perspective for device applications
Kees van der Beek
(Laboratoire des Solides Irradiés)
S6. Materials Nano-technology: Surfaces and Interfaces of Thin Films and Nano-composites
Lakshmi Reddy
(SVD College)
S6. Materials Nano-technology: Surfaces and Interfaces of Thin Films and Nano-composites
Masayoshi Tonouchi
(Osaka Univ.)
S5. Terahertz optical properties of oxides and the perspective for device applications
Miho Kitamura
(KEK)
S6. Materials Nano-technology: Surfaces and Interfaces of Thin Films and Nano-composites
Nobuhito Imanaka
(Osaka Univ.)
6.4 Thin films and New materials
Oleksandr Tovstolytkin
(Inst. of Magnetism of the NAS of Ukraine)
S6. Materials Nano-technology: Surfaces and Interfaces of Thin Films and Nano-composites
Tadakatsu Ohkubo
(NIMS)
S7. Nanoscale 3D analyses for new device and materials development
Tadao Nagatsuma
(Osaka Univ.)
S5. Terahertz optical properties of oxides and the perspective for device applications
Takuya Satoh
(Kyushu Univ.)
S5. Terahertz optical properties of oxides and the perspective for device applications
Vinod Parmar
(Indian Inst. of Tech., Delhi)
S6. Materials Nano-technology: Surfaces and Interfaces of Thin Films and Nano-composites
Yasuo Cho
(Tohoku Univ.)
S7. Nanoscale 3D analyses for new device and materials development
Yasuo Takahashi
(Hokkaido Univ.)
S7. Nanoscale 3D analyses for new device and materials development
Yasuyuki Hikita
(Stanford Univ.)
S6. Materials Nano-technology: Surfaces and Interfaces of Thin Films and Nano-composites
7.Beam Technology and Nanofabrication
8.Plasma Electronics
Dou-Yan Wang
(Kumamoto Univ.)
S8. Plasma application for advanced agriculture: creation and control of novel environments for plant growth
Koichi Takaki
(Iwate Univ.)
S8. Plasma application for advanced agriculture: creation and control of novel environments for plant growth
Masanori Tachikawa
(Tohoku Univ.)
S8. Plasma application for advanced agriculture: creation and control of novel environments for plant growth
Michel Pons
(CNRS)
8. Plasma Electronics
Michio Kondo
(AIST)
8. Plasma Electronics
Naoto Kodama
(Kanazawa Univ.)
8. Plasma Electronics
Nobuya Hayashi
(Kyushu Univ.)
S8. Plasma application for advanced agriculture: creation and control of novel environments for plant growth
Shota Sasaki
(Tohoku Univ.)
8. Plasma Electronics
Toshiro Kaneko
(Tohoku Univ.)
S8. Plasma application for advanced agriculture: creation and control of novel environments for plant growth
Toshitaka Uchino
(Kyushu Univ.)
S8. Plasma application for advanced agriculture: creation and control of novel environments for plant growth
Vida Mildaziene
(Vytautas Magnus Univ., Lithuania)
8. Plasma Electronics
10.Spintronics and Magnetics
Hiromasa Shimizu
(Tokyo Univ. of Agri. and Tech.)
S9. Frontier of the studies weaved by light and spins
Nozomi Nishizawa
(Tokyo Inst. of Tech.)
S9. Frontier of the studies weaved by light and spins
Shik Shin
(The Univ. of Tokyo)
S9. Frontier of the studies weaved by light and spins
Takuya Satoh
(Kyushu Univ.)
S9. Frontier of the studies weaved by light and spins
Yuichi Nakamura
(Toyohashi Univ. of Tech.)
S9. Frontier of the studies weaved by light and spins
Yukiko Takahashi
(NIMS)
S9. Frontier of the studies weaved by light and spins
Yusuke Hashimoto
(Tohoku Univ.)
S9. Frontier of the studies weaved by light and spins
12.Organic Molecules and Bioelectronics
Eiji Itoh
(Shinshu Univ.)
S10. Organic Devices for Sensing to Next Generation of IoT
Hideo Otaka
(Bando Chemical Industries, Ltd.)
S10. Organic Devices for Sensing to Next Generation of IoT
Hiroyuki Iijima
(Kyushu Univ.)
S11. New Trend: Interdisciplinary approach to link biological materials and advanced device applications
Hiroyuki Yoshida
(Osaka Univ.)
12.3 Functional Materials and Novel Devices
Ichiro Yamashita
(Osaka Univ.)
12.6 Nanobiotechnology
Ken-ichiro Kamei
(Kyoto Univ.)
S11. New Trend: Interdisciplinary approach to link biological materials and advanced device applications
Kenji Ishiba
(Kobe Univ.)
S22. New developments on flexible energy harvesting devices
Koji Miyazaki
(Kyushu Inst. of Tech.)
S22. New developments on flexible energy harvesting devices
Masahiro Takinoue
(Tokyo Inst. of Tech.)
S11. New Trend: Interdisciplinary approach to link biological materials and advanced device applications
Mitsuhiro Ebara
(NIMS)
S11. New Trend: Interdisciplinary approach to link biological materials and advanced device applications
Narishige Takamatsu
(Sumitomo Riko Co., Ltd.)
S10. Organic Devices for Sensing to Next Generation of IoT
Satoru Kidoaki
(Kyushu Univ.)
S11. New Trend: Interdisciplinary approach to link biological materials and advanced device applications
Satoshi Aihara
(NHK STRL)
S10. Organic Devices for Sensing to Next Generation of IoT
Satoshi Kaneko
(Tokyo Inst. of Tech.)
12.2 Characterization and Materials Physics
Shuji Hayase
(Kyushu Inst. of Tech.)
S22. New developments on flexible energy harvesting devices
Takaya Kubo
(The Univ. of Tokyo)
S22. New developments on flexible energy harvesting devices
Takayuki Arie
(Osaka Prefecture Univ.)
S22. New developments on flexible energy harvesting devices
Takeharu Nagai
(Osaka Univ.)
S11. New Trend: Interdisciplinary approach to link biological materials and advanced device applications
Takeo Miyake
(Waseda Univ.)
S22. New developments on flexible energy harvesting devices
Tatsuo Hasegawa
(The Univ. of Tokyo)
12.4 Organic light-emitting devices and organic transistors
Yoshiro Tajitsu
(Kansai Univ.)
S10. Organic Devices for Sensing to Next Generation of IoT
Yoshiyuki Nonoguchi
(NAIST)
S22. New developments on flexible energy harvesting devices
13.Semiconductors
Akira Tsuchiyama
(Kyoto Univ.)
S7. Nanoscale 3D analyses for new device and materials development
Atsunobu Isobayashi
(Toshiba Corp.)
S12. Challenges for‘multi-scale' processing ― dry, wet, or else?…
Bill Thompson
(Heelionics LLC)
S14. Recent GFIS・advanced ion source microscopy technologies and its future prospects for R & D of materials and devices
Chihaya Adachi
(Kyushu Univ.)
S15. Advances and future prospects of luminescent devices based on new material and quantum structure
Eiichi Kondoh
(Yamanashi Univ.)
S12. Challenges for‘multi-scale' processing ― dry, wet, or else?…
Gregor Hlawacek
(Helmholtz-Zentrum Dresden-Rossendorf)
S14. Recent GFIS・advanced ion source microscopy technologies and its future prospects for R & D of materials and devices
Hideaki Araki
(Nat. Inst. of Tech., Nagaoka College)
S23. The history and future of Multinary Compounds and Solar Cells - 30th anniversary symposium of Professional Group of Multinary Compounds and Solar Cells -
Hideya Kumomi
(Tokyo Inst. of Tech.)
S13. Film Formation and Low Temperature of IV Element Semiconductor
Hiroki Tanaka
(Toshiba Corp.)
S7. Nanoscale 3D analyses for new device and materials development
Hiroshi Mizuta
(JAIST)
S.14 Recent GFIS・advanced ion source microscopy technologies and its future prospects for R & D of materials and devices
Ichiro Mizushima
(Toshiba Corp.)
S13. Film Formation and Low Temperature of IV Element Semiconductor
Jun Kato
(Toray Research Center)
S7. Nanoscale 3D analyses for new device and materials development
Junji Kido
(Yamagata Univ.)
S15. Advances and future prospects of luminescent devices based on new material and quantum structure
Katsuaki Sato
(JST)
S23. The history and future of Multinary Compounds and Solar Cells - 30th anniversary symposium of Professional Group of Multinary Compounds and Solar Cells -
Katsumi Kishino
(Sophia Univ.)
S15. Advances and future prospects of luminescent devices based on new material and quantum structure
Kauzo Nojiri
(Lam Research Corp.)
S12. Challenges for‘multi-scale' processing ― dry, wet, or else?…
Kazuya Saito
(ULVAC)
S13. Film Formation and Low Temperature of IV Element Semiconductor
Kentaro Kawai
(Osaka Univ.)
Recent GFIS・advanced ion source microscopy technologies and its future prospects for R & D of materials and devices
Koutoku Ohmi
(Tottori Univ.)
S23. The history and future of Multinary Compounds and Solar Cells - 30th anniversary symposium of Professional Group of Multinary Compounds and Solar Cells -
Reo Kometani
(The Univ. of Tokyo)
S14. Recent GFIS・advanced ion source microscopy technologies and its future prospects for R & D of materials and devices
Ryusuke Nakamura
(Osaka Prefecture Univ.)
S13. Film Formation and Low Temperature of IV Element Semiconductor
Satoshi Itoh
(NIMS)
S23. The history and future of Multinary Compounds and Solar Cells - 30th anniversary symposium of Professional Group of Multinary Compounds and Solar Cells -
Satoshi Iwamoto
(The Univ. of Tokyo)
S15. Advances and future prospects of luminescent devices based on new material and quantum structure
Shinichi Matsubara
(Hitachi, Ltd.)
S14. Recent GFIS・advanced ion source microscopy technologies and its future prospects for R & D of materials and devices
Shinichi Ogawa
(AIST)
S14. Recent GFIS・advanced ion source microscopy technologies and its future prospects for R & D of materials and devices
Shozo Shingubara
(Kansai Univ.)
S12. Challenges for‘multi-scale' processing ― dry, wet, or else?…
Susumu Noda
(Kyoto Univ.)
S15. Advances and future prospects of luminescent devices based on new material and quantum structure
Tadakatsu Ohkubo
(NIMS)
S7. Nanoscale 3D analyses for new device and materials development
Taizo Sado
(Kyushu Univ.)
S13. Film Formation and Low Temperature of IV Element Semiconductor
Takahiro Namazu
(Aichi Inst. of Tech.)
S14. Recent GFIS・advanced ion source microscopy technologies and its future prospects for R & D of materials and devices
Takahiro Wada
(Ryukoku Univ.)
S23. The history and future of Multinary Compounds and Solar Cells - 30th anniversary symposium of Professional Group of Multinary Compounds and Solar Cells -
Tanemasa Asano
(Kyushu Univ.)
S13. Film Formation and Low Temperature of IV Element Semiconductor
Yasuo Cho
(Tohoku Univ.)
S7. Nanoscale 3D analyses for new device and materials development
Yasuo Takahashi
(Hokkaido Univ.)
S7. Nanoscale 3D analyses for new device and materials development
Yasutaka Yamaguchi
(Osaka Univ.)
S12. Challenges for‘multi-scale' processing ― dry, wet, or else?…
Yoshihiko Kanemitsu
(Kyushu Univ.)
S15. Advances and future prospects of luminescent devices based on new material and quantum structure
Yukari Katsura
(The Univ. of Tokyo)
S23. The history and future of Multinary Compounds and Solar Cells - 30th anniversary symposium of Professional Group of Multinary Compounds and Solar Cells -
Yukiharu Uraoka
(NAIST)
S13. Film Formation and Low Temperature of IV Element Semiconductor
15.Crystal Engineering
Akihiro Murayama
(Hokkaido Univ.)
S16. III-V semiconductor growth technology for innovative devices
Hajime Fujikura
(SCIOCS Co., Ltd.)
S17. Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ～Crystal Growth, Characterization and Application for Advanced GaN Electron Devices～
Hidekazu Tsuchida
(CRIEPI)
S18. Frontier of the research in dislocations
Ichiro Yonenaga
(Tohoku Univ.)
S18. Frontier of the research in dislocations
Jun Suda
(Nagoya Univ.)
S17. Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ～Crystal Growth, Characterization and Application for Advanced GaN Electron Devices～
Junji Kotani
(Fujitsu Laboratories Ltd.)
S17. Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ～Crystal Growth, Characterization and Application for Advanced GaN Electron Devices～
Katsuhiro Tomioka
(Hokkaido Univ.)
S16. III-V semiconductor growth technology for innovative devices
Kazunari Kurita
(SUMCO Corp.)
S19. Science of impurity control in silicon wafers
Kei Kamada
(Tohoku Univ.)
15.1 Bulk crystal growth
Kensuke Okonogi
(Micron Memory Japan, Inc.)
S19. Science of impurity control in silicon wafers
Koji Sueoka
(Okayama Prefectural Univ.)
S19. Science of impurity control in silicon wafers
Kouichi Yamaguchi
(Univ. of Electro-Communications)
S16. III-V semiconductor growth technology for innovative devices
Masakazu Sugiyama
(The Univ. of Tokyo)
S16. III-V semiconductor growth technology for innovative devices
Masataka Hourai
(SUMCO Corp.)
S19. Science of impurity control in silicon wafers
Masayoshi Tonouchi
(Osaka Univ.)
S16. III-V semiconductor growth technology for innovative devices
Nobuhiko Sato
(Canon Inc.)
S19. Science of impurity control in silicon wafers
Satoshi Uda
(Tohoku Univ.)
15.1 Bulk crystal growth
Shigefusa Chichibu
(Tohoku Univ.)
S17. Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ～Crystal Growth, Characterization and Application for Advanced GaN Electron Devices～
Shinji Matsuo
(NTT)
S16. III-V semiconductor growth technology for innovative devices
Takahiro Kitada
(Tokushima Univ.)
S16. III-V semiconductor growth technology for innovative devices
Takashi Matsuoka
(Tohoku Univ.)
S17. Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ～Crystal Growth, Characterization and Application for Advanced GaN Electron Devices～
Tomonori Itoh
(Mie Univ.)
S16. III-V semiconductor growth technology for innovative devices
Tomoyuki Tanikawa
(Tohoku Univ.)
S18. Frontier of the research in dislocations
Tsunenobu Kimoto
(Kyoto Univ.)
S18. Frontier of the research in dislocations
Yasuhiko Arakawa
(The Univ. of Tokyo)
S16. III-V semiconductor growth technology for innovative devices
Yoshihiro Ishitani
(Chiba Univ.)
S17. Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors ～Crystal Growth, Characterization and Application for Advanced GaN Electron Devices～
Yuki Tokumoto
(The Univ. of Tokyo)
S18. Frontier of the research in dislocations
Yutaka Ohno
(Tohoku Univ.)
S19. Science of impurity control in silicon wafers
16.Amorphous and Microcrystalline Materials
Kenji Yamamoto
(Kaneka Corp.)
16.3 Bulk, thin-film and other silicon-based solar cells
Shinya Hosokawa
(Kumamoto Univ.)
16.1 Fundamental properties, evaluation, process and devices in disordered materials
Susumu Noda
(Kyoto Univ.)
16.3 Bulk, thin-film and other silicon-based solar cells
Yoshihiro Hishikawa
(AIST)
16.3 Bulk, thin-film and other silicon-based solar cells
17.Nanocarbon Technology
Hitoshi Wakabayashi
(Tokyo Inst. of Tech.)
S20. Latest Application Researches and Future Prospects of Functional Atomic Layers
Kazuhiko Matsumoto
(Osaka Univ.)
17.2 Graphene
Kazuhito Tsukagoshi
(NIMS)
S20. Latest Application Researches and Future Prospects of Functional Atomic Layers
Kazutomo Suenaga
(AIST)
17.3 Layered materials
Michiko Kusunoki
(Nagoya Univ.)
17.2 Graphene
Shintaro Sato
(Fujitsu Laboratories Ltd.)
S20. Latest Application Researches and Future Prospects of Functional Atomic Layers
Taiichi Otsuji
(Tohoku Univ.)
S20. Latest Application Researches and Future Prospects of Functional Atomic Layers
21. Joint Session K
Keigo Hoshikawa
(Shinshu Univ.)
S21. Gallium Oxide : Novel Wide Band-Gap Oxide Material for Future Generation
Kiyoshi Shimamura
(NIMS)
S21. Gallium Oxide : Novel Wide Band-Gap Oxide Material for Future Generation
Masataka Higashiwaki
(NICT)
S21. Gallium Oxide : Novel Wide Band-Gap Oxide Material for Future Generation
Shizuo Fujita
(Kyoto Univ.)
S21. Gallium Oxide : Novel Wide Band-Gap Oxide Material for Future Generation
Takayoshi Oshima
(Saga Univ.)
S21. Gallium Oxide : Novel Wide Band-Gap Oxide Material for Future Generation
Taku Mikami
(Fuji Keizai Co., Ltd.)
S21. Gallium Oxide : Novel Wide Band-Gap Oxide Material for Future Generation
Yuichi Oshima
(NIMS)
S21. Gallium Oxide : Novel Wide Band-Gap Oxide Material for Future Generation
