Date | Hours | Room | Category |
---|---|---|---|
Symporsium Title | |||
Sep. 17 (Wed.) | 9:30-16:30 | A13 | 7 Beam Technology and NanofabricationPhase problem in the analysis of buried interfaces
by X-ray reflectivity and surface X-ray scattering - |
13:15-17:45 | A19 | 13 Semiconductors A (Silicon)Low-Temperature Growth of Group-IV Semiconductors on Insulator - Emerging New Crystallization Techniques - |
|
13:30-17:30 | A14 | 13 Semiconductors A (Silicon)Interfacial nano electrochemistry: Research frontiers of semiconductor wet processes |
|
13:00-17:45 | A25 | 16 Amorphous and Microcrystalline MaterialsCurrent situation and issues of thin-film silicon solar cell technologies |
|
9:15-18:00 | S1 | 17 Nanocarbon TechnologyJapan-Korea Joint Symposium on Semiconductor
Physics and Technology |
|
Sept. 18 (Thu.) | 13:30-17:00 | A23 | 1 Applied Physics in GeneralActivity of the scientific enlightenment including upbringing of the student |
13:00-17:00 | A1 | 6 Thin Films and
Surfaces
|
|
13:15-18:15 | A10 | 6 Thin Films and SurfacesOxide electronics at solid-liquid interfaces: Chemistry and device applications |
|
13:15-18:45 | A13 | 7 Beam Technology and NanofabricationSurface reaction control by atomic and molecular beams, its development and application |
|
13:30-17:30 | S1 | 8 Plasma ElectronicsComputer Simulations for Plasma Processing (state-of-the-art plasma modelling) |
|
13:30-17:15 | S2 | 10 Spintronics and MagneticsFrontier of Spintronic Materials and Devices |
|
13:15-18:30 | B3 | 17 Nanocarbon TechnologyPresent and Future of Functional atomic thin film research |
|
Sep. 19 (Fri.) | 13:30-16:45 | A23 | 1 Applied Physics in GeneralResource Recycling and Energy Utilization from View Point of Applied Physics |
13:30-16:15 | B2 | 2 Ionizing RadiationBehavior of nuclear fuel and fission products during severe accident and activities on decontamination |
|
13:30-17:15 | C7 | 3 Optics and PhotonicsFrontiers in Quantum Metrology |
|
13:30-17:30 | A18 | 6 Thin Films and SurfacesNew Frontiers and Future Perspectives in Surface Reaction Observation Using Synchrotron Radiation |
|
9:15-17:00 | A4 | 6 Thin Films and
Surfaces
|
|
8:30-18:00 | C5 | 15 Crystal EngineeringMaterials Science of Singularity in Nitride semiconductors -Characterization and Crystallography- |